Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
نویسندگان
چکیده
منابع مشابه
Gate-Field-Induced Schottky Barrier Lowering in a Nanotube Field-Effect Transistor
We propose that in nanotube field effect transistors (FETs) with small effective dielectric thickness the vertical potential drop across the nanotube diameter at finite gate bias can lower or eliminate the Schottky barrier at the electrode. This effect is demonstrated in single-walled carbon nanotube FETs fabricated on top of ultra-high-κ dielectric constant SrTiO3/Si substrates. These FETs sho...
متن کاملHigh-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...
متن کاملHigh performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
Articles you may be interested in Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment Appl. Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method Appl. Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes...
متن کاملAmorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes
Recently, amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) with inkjet printing silver source/drain electrodes have attracted great attention, especially for large area and flexible electronics applications. The silver ink could be divided into two types: one is based on silver nanoparticles, and the other is silver salt ink. Organic materials are essential in the formula...
متن کاملPolycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2001
ISSN: 0741-3106,1558-0563
DOI: 10.1109/55.915606